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d a t a sh eet product speci?cation 1999 oct 20 discrete semiconductors blf202 hf/vhf power mos transistor m3d175
1999 oct 20 2 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 features high power gain easy power control gold metallization good thermal stability withstands full load mismatch. applications communications transmitters in the hf/vhf range with a nominal supply voltage of 12.5 v. description silicon n-channel enhancement mode vertical d-mos transistor in an 8-lead sot409a smd package with a ceramic cap. pinning - sot409a pin description 1, 8 source 2, 3 gate 4, 5 source 6, 7 drain handbook, halfpage mbk150 top view 14 85 fig.1 simplified outline. quick reference data rf performance at t mb =25 c in a common source test circuit. mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) cw, class-b 175 12.5 2 > 10 > 50 caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a, and snw-fq-302b.
1999 oct 20 3 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 limiting values in accordance with the absolute maximum system (iec 134). thermal characteristics symbol parameter conditions min. max. unit v ds drain-source voltage - 40 v v gs gate-source voltage - 20 v i d dc drain current - 1a p tot total power dissipation t mb 85 c - 5.7 w t stg storage temperature - 65 150 c t j junction temperature - 200 c symbol parameter conditions value unit r th j-mb thermal resistance from junction to mounting base t mb 85 c, p tot = 5.7 w 20.5 k/w handbook, halfpage mcd789 110 v ds (v) i d (a) 10 2 10 1 10 - 1 10 - 2 (1) (2) fig.2 dc soar. (1) current is this area may be limited by r ds(on) . (2) t mb =85 c.
1999 oct 20 4 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 3 ma; v gs =0 40 -- v v gs(th) gate-source threshold voltage i d = 3 ma; v ds =10v 2 - 4.5 v i dss drain-source leakage current v gs = 0; v ds = 12.5 v -- 10 m a i gss gate-source leakage current v gs = 20 v; v ds =0 -- 1 m a i dsx on-state drain current v gs = 15 v; v ds =10v - 1.3 - a r dson drain-source on-state resistance i d = 0.3 a; v gs =15v - 3.5 4 w g fs forward transconductance i d = 0.3 a; v ds = 10 v 80 135 - ms c is input capacitance v gs = 0; v ds = 12.5 v; f = 1 mhz - 5.3 - pf c os output capacitance v gs = 0; v ds = 12.5 v; f = 1 mhz - 7.8 - pf c rs feedback capacitance v gs = 0; v ds = 12.5 v; f = 1 mhz - 1.8 - pf handbook, halfpage 15 - 5 5 10 0 mgp111 11010 2 10 3 t.c. (mv/k) i d (ma) fig.3 temperature coefficient of gate-source voltage as a function of drain current; typical values. v ds =10v. handbook, halfpage 0 1600 800 1200 400 0 420 mgp112 81216 i d (ma) v gs (v) fig.4 drain current as a function of gate-source voltage; typical values. v ds = 10 v; t j =25 c.
1999 oct 20 5 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 handbook, halfpage 0 40 80 160 5 0 4 120 3 2 1 mgp113 r dson ( w ) t j ( c) fig.5 drain-source on-state resistance as a function of junction temperature; typical values. v gs = 15 v; i d = 0.3 a. handbook, halfpage 048 16 30 10 0 20 mgp114 12 c (pf) v ds (v) c os c is fig.6 input and output capacitance as functions of drain-source voltage; typical values. v gs = 0; f = 1 mhz. handbook, halfpage 048 16 5 0 4 mgp115 12 3 2 1 c rs (pf) v ds (v) fig.7 feedback capacitance as a function of drain-source voltage; typical values. v gs = 0; f = 1 mhz.
1999 oct 20 6 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 application information for class-b operation t mb =25 c; r gs = 237 w ; unless otherwise speci?ed. rf performance in cw operation in a common source class-b test circuit. ruggedness in class-b operation the blf202 is capable of withstanding a load mismatch corresponding to vswr = 50:1 through all phases under the following conditions: v ds = 15.5 v; f = 175 mhz at rated load power. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) cw, class-b 175 12.5 20 2 > 10; typ. 13 > 50; typ. 55 handbook, halfpage 1 20 12 16 8 0 4 100 60 80 40 0 20 1.5 3.5 mgp116 2 2.5 3 g p (db) p l (w) h d (%) h d g p fig.8 power gain and efficiency as a functions of load power; typical values. class-b operation; v ds = 12.5 v; i dq = 20ma; f = 175 mhz. handbook, halfpage 0 0.2 0.4 0.8 4 3 1 0 2 mgp117 0.6 p l (w) p in (w) fig.9 load power as a function of input power; typical values. class-b operation; v ds = 12.5 v; i dq = 20 ma; f = 175 mhz.
1999 oct 20 7 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 handbook, full pagewidth mgp118 c5 c7 50 w input c1 c3 c4 l1 l2 d.u.t. l3 l4 l5 r1 r2 r4 r3 c2 c9 c8 c10 + v d c11 l6 r6 r5 c6 50 w output fig.10 test circuit for class-b operation. f = 175 mhz.
1999 oct 20 8 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 list of components (class-b test circuit) notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. the striplines are on a double copper-clad printed-circuit board, with ptfe fibre-glass dielectric ( e r = 2.2), thickness 1.6 mm. component description value dimensions catalogue no. c1, c11 ?lm dielectric trimmer 2 to 9 pf 2222 809 09005 c2, c9 ?lm dielectric trimmer 2 to 9 pf 2222 809 09002 c3, c5 multilayer ceramic chip capacitor; note 1 1 nf; 500 v c4, c6 multilayer ceramic chip capacitor 2 100 nf in parallel, 50 v 2222 852 47104 c7 sprague electrolytic tantalum capacitor 2.2 m f; 35 v c8 multilayer ceramic chip capacitor; note 1 5.1 pf; 500 v c10 multilayer ceramic chip capacitor; note 1 9.1 pf; 500 v l1 8 turns enamelled 0.8 mm copper wire 137 nh length 5.1 mm; int. dia. 4 mm; leads 2 5mm l2, l3 stripline; note 2 81 w 8mm 2mm l4 3 turns enamelled 1 mm copper wire 57 nh length 5 mm; int. dia. 6 mm; leads 2 5mm l5 9 turns enamelled 1 mm copper wire 355 nh length 11 mm; int. dia. 7 mm; leads 2 5mm l6 grade 3b ferroxcube rf choke 4312 020 36642 r1 0.4 w metal ?lm resistor 237 w 2322 151 72371 r2 0.4 w metal ?lm resistor 1 k w 2322 151 71002 r3 0.4 w metal ?lm resistor 1 m w 2322 151 71005 r4 10 turns cermet potentiometer 5 k w r5 0.4 w metal ?lm resistor 7.5 k w 2322 151 77502 r6 1 w metal ?lm resistor 10 w 2322 153 51009
1999 oct 20 9 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 handbook, halfpage 0 50 100 200 250 0 - 125 125 150 mgp119 z i ( w ) f (mhz) r i x i fig.11 input impedance as a function of frequency (series of components); typical values. class b-operation; v ds = 12.5 v; i dq =20ma; r gs = 237 w ; p l =2w. handbook, halfpage 0 50 100 200 50 0 40 mgp120 150 30 20 10 z l ( w ) f (mhz) x l r l fig.12 load impedance as a function of frequency (series components); typical values. class b-operation; v ds = 12.5 v; i dq = 20 ma; r gs = 237 w ; p l =2w. handbook, halfpage mba379 z i z l fig.13 definition of mos impedance. handbook, halfpage 0 50 100 200 20 10 0 5 15 mgp121 150 g p (db) f (mhz) fig.14 power gain as a function of frequency; typical values. class b-operation; v ds = 12.5 v; i dq = 20 ma; r gs = 237 w ; p l =2w.
1999 oct 20 10 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 mounting recommendations both the metallized groundplate and leads contribute to the heatflow. it is recommended that the transistor is mounted on a grounded metallized area of 0.8 mm maximum thickness on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. a thermal resistance r th(mb-h) of 5 k/w can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. handbook, full pagewidth mgk390 1.87 (2 ) 4.60 0.80 (2 ) 0.60 (4 ) 0.50 (12 ) 1.00 (8 ) 1.00 (9 ) 3.60 7.38 fig.15 footprint sot409a. dimensions in mm.
1999 oct 20 11 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 package outline references outline version european projection issue date iec jedec eiaj sot409a 0 2.5 5 mm scale a q 1 l ceramic surface mounted package; 8 leads sot409a unit c bd e e 2 hh 1 lq 1 a a w 1 w 2 mm 0.23 0.18 0.58 0.43 4.93 4.01 5.94 5.03 d 2 5.16 5.00 4.14 3.99 e 1.27 4.39 4.24 7.47 7.26 0.25 7 0 0.25 dimensions (millimetre dimensions are derived from the original inch dimensions) 1.02 0.51 0.10 0.00 a 2.36 2.06 inches 0.009 0.007 0.023 0.017 0.194 0.158 0.234 0.198 0.203 0.197 0.163 0.157 0.050 0.173 0.167 0.294 0.286 0.010 7 0 0.010 0.040 0.020 0.004 0.000 0.093 0.081 98-01-27 c h 14 85 e a e 2 b h 1 d d 2 e b w 2 w 1 b
1999 oct 20 12 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. short-form speci?cation the data in this speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 oct 20 13 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 notes
1999 oct 20 14 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 notes
1999 oct 20 15 philips semiconductors product speci?cation hf/vhf power mos transistor blf202 notes
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